Naina Semiconductor Ltd.
emiconductor
Single Phase Bridge Rectifier
Features
•
Glass passivated chip junction
•
Surge capability of 300 A
•
High efficiency
•
Electrically isolated metal case for maximum heat dissipation
•
Mounting: thru hole for # 8 screw
25MB
Thermal and Mechanical Specifications
(T
A
= 25
0
C unless otherwise
noted)
Parameters
Maximum operating junction
temperature range
Maximum storage temperature
range
Approximate weight
Symbol
T
J
T
Stg
Values
- 55 to +
125
- 55 to +
150
30
Units
0
C
C
GBPC
0
g
Voltage Ratings
(T
A
= 25
0
C unless otherwise noted)
Parameter
Maximum repetitive peak reverse
voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output
current
Peak forward surge current (10ms)
single half sine-wave superimposed
on rated load
Maximum DC forward voltage drop
per element @ 7.5 A
T
A
=
Maximum DC reverse
25
0
C
current at rated DC
blocking voltage per
T
A
=
element
125
0
C
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
50
35
50
100
70
100
200
140
200
25MB
400
280
400
25.0
300
1.2
5.0
I
R
500
µA
600
420
600
800
560
800
1000
700
1000
Units
V
V
V
A
A
V
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120
4205450
0120-4273653
sales@nainasemi.com • www.nainasemi.com
NAINA [ NAINA SEMICONDUCTOR LTD. ]
