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300UR160 参数 Datasheet PDF下载

300UR160图片预览
型号: 300UR160
PDF下载: 下载PDF文件 查看货源
内容描述: 标准恢复二极管(梭哈和平底型) [Standard Recovery Diodes (Stud and Flat Base Type)]
分类和应用: 二极管
文件页数/大小: 2 页 / 106 K
品牌: NAINA [ NAINA SEMICONDUCTOR LTD. ]
 浏览型号300UR160的Datasheet PDF文件第2页  
Naina Semiconductor Ltd.
emiconductor
Features
Diffused Series
Industrial grade
Available in Normal and Reverse polarity
Metric and UNF thread type
300NS(R)
Standard Recovery Diodes (Stud and Flat Base Type)
andard
Electrical Specifications
(T
E
= 25
0
C, unless otherwise noted)
Symbol
I
F(AV)
V
FM
I
FSM
I
FRM
It
2
Parameters
Maximum avg. forward current @ T
E
=
O
150 C
Maximum peak forward voltage drop
@ rated I
F(AV)
Maximum peak one cycle (non-rep)
rep)
surge current @ 10 msec
Maximum peak repetitive surge
current
2
Maximum I t rating (non-rep) for 5 to
rep)
10 msec
Values
300
1.4
5000
14000
15000
Units
A
V
A
A
A sec
2
DO-205AB (DO-9)
205AB (DO
Electrical Ratings
(T
E
= 25
0
C, unless otherwise noted)
Type
number
Voltage
Code
10
20
40
60
300NS(R)
80
100
120
140
160
V
RRM,
Maximum
repetitive peak
reverse voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
V
R(RMS),
Maximum
RMS reverse
voltage
(V)
70
140
280
420
560
700
840
980
1120
V
R,
Maximum
DC blocking
voltage
(V)
100
200
400
600
800
1000
1200
1400
1600
Recommended RMS
working voltage
(V)
40
80
160
240
320
400
480
560
640
200
I
R(AV),
Maximum
avg. reverse
leakage current
(µA)
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
4205450
0120
sales@nainasemi.com • www.nainasemi.com