Naina Semiconductor Ltd.
emiconductor
Silicon Rectifier, 6.0A
Features
•
Diffused junction
•
Low cost
•
Low reverse leakage current
•
High current capability & low forward voltage drop
•
Plastic material carrying UL recognition 94V
94V-0
•
Polarity: Color Band denotes Cathode
•
Lead free finish
6A05 - 6A10
A05
Thermal and Mechanical Specifications
(T
A
= 25
0
C unless otherwise
specified)
Parameters
Maximum operating junction
temperature range
Maximum storage temperature range
Typical thermal resistance junction to
ambient
Approximate weight
Symbol
T
J
T
Stg
R
θJA
W
Values
-55 to
+150
-55 to
+150
10
0
Units
0
C
C
JEDEC R
R-6
0
C/W
g
2.1
Electrical Characteristics
(T
A
= 25
0
C unless otherwise specified
specified)
Parameter
Maximum repetitive peak reverse
voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output
current @ T
A
= 50
0
C
Peak forward surge current (8.3ms)
single half sine-wave superimposed
on rated load
Maximum DC forward voltage drop
per element @ 10 A
Typical junction capacitance
Maximum DC reverse
T
A
= 25
0
C
current at rated DC
T
A
= 100
0
C
blocking voltage
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
CJ
I
R
100
6A05
50
35
50
6A1
100
70
100
6A2
200
140
200
6A4
400
280
400
6.0
400
0.9
150
10
6A6
600
420
600
6A8
800
560
800
6A10
1000
700
1000
Units
V
V
V
A
A
V
pF
µA
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120
4205450
0120-4273653
sales@nainasemi.com • www.nainasemi.com
NAINA [ NAINA SEMICONDUCTOR LTD. ]
