Naina Semiconductor Ltd.
emiconductor
Fast Recovery Diode 1.0A
Diode,
Features
•
•
•
•
•
Diffused junction
High efficiency
Low forward voltage drop
Low power loss
High surge current capability
BA159
Mechanical Characteristics
•
Case: Molded Plastic
•
•
•
•
Cathode indicated by Polarity band
Mounting position: Any
Terminals: Finish Tin plated, Solderable per
,
MIL-STD-202, Method 208
Weight: 0.33 grams (approx.)
DO
O-41
Maximum Ratings
(T
A
= 25
0
C unless otherwise specified
specified)
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward output current @ T
A
= 50
0
C
Peak forward surge current (8.3ms) single half sine
ms)
sine-wave
superimposed on rated load
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
BA159
1000
700
1000
1.0
30
Units
V
V
V
A
A
Electrical Characteristics
(T
A
= 25
0
C unless otherwise specified)
Parameters
Maximum DC forward voltage drop @ 1.0A DC
A
Maximum DC reverse current @ rated DC blocking
voltage
Maximum reverse recovery time
T
A
= 25
0
C
T
A
= 100
0
C
Symbol
V
F
I
R
t
RR
BA159
1.2
5.0
50
500
Units
V
µA
ns
Thermal and Mechanical Specifications
(T
A
= 25
0
C unless otherwise specified)
Parameters
Typical thermal resistance, junction to ambient
Operating and Storage temperature range
Symbol
R
θJA
T
J
,
T
Stg
Values
65
- 6 to + 150
65
Units
0
C/W
0
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120
4205450
0120-4273653
sales@nainasemi.com • www.nainasemi.com
NAINA [ NAINA SEMICONDUCTOR LTD. ]
