Naina Semiconductor Ltd.
Features
•
•
•
•
Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V V
RRM
MBR12045CT thru
MBR120100CTR
Silicon Schottky Diode, 120A
TWIN TOWER PACKAGE
Maximum Ratings
(T
J
= 25
o
C unless otherwise specified)
Parameter
Repetitive peak
reverse voltage
RMS reverse voltage
DC blocking voltage
Average forward
current
Non-repetitive
forward surge
current, half sine-
wave
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
T
C
≤ 140
o
C
T
C
= 25
o
C
t
p
= 8.3 ms
Conditions
MBR12045CT
(R)
45
32
45
120
MBR12060CT MBR12080CT
(R)
(R)
60
42
60
120
80
56
80
120
MBR120100C
T(R)
100
70
100
120
Units
V
V
V
A
I
FSM
800
800
800
800
A
Electrical Characteristics
(T
J
= 25
o
C unless otherwise specified)
Parameter
DC forward voltage
Symbol
V
F
Conditions
I
F
= 60 A
T
J
= 25
o
C
V
R
= 20 V
T
J
= 25
o
C
V
R
= 20 V
T
J
= 125
o
C
MBR12045CT
(R)
0.68
3
200
MBR12060CT
(R)
0.75
3
200
MBR12080CT
(R)
0.86
3
200
MBR120100C
T(R)
0.86
3
mA
200
Units
V
DC reverse current
I
R
Thermal Characteristics
(T
J
= 25
o
C unless otherwise specified)
Parameter
Thermal resistance
junction to case
Operating, storage
temperature range
Symbol
R
thJ-C
T
J
,
T
stg
MBR12045CT
(R)
0.8
- 40 to +175
MBR12060CT
(R)
0.8
- 40 to +175
MBR12080CT
(R)
0.8
- 40 to +175
MBR120100C
T(R)
0.8
- 40 to +175
Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com
NAINA [ NAINA SEMICONDUCTOR LTD. ]
