欢迎访问ic37.com |
会员登录 免费注册
发布采购

MBR20030CT 参数 Datasheet PDF下载

MBR20030CT图片预览
型号: MBR20030CT
PDF下载: 下载PDF文件 查看货源
内容描述: 硅肖特基二极管, 200A [Silicon Schottky Diode, 200A]
分类和应用: 肖特基二极管局域网
文件页数/大小: 2 页 / 135 K
品牌: NAINA [ NAINA SEMICONDUCTOR LTD. ]
 浏览型号MBR20030CT的Datasheet PDF文件第2页  
Naina Semiconductor Ltd.
Features
Guard Ring Protection
Low forward voltage drop
High surge current capability
Up to 100V V
RRM
MBR20020CT thru
MBR20040CTR
Silicon Schottky Diode, 200A
TWIN TOWER PACKAGE
Maximum Ratings
(T
J
= 25
o
C unless otherwise specified)
Parameter
Repetitive peak
reverse voltage
RMS reverse voltage
DC blocking voltage
Average forward
current
Non-repetitive
forward surge
current, half sine-
wave
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
T
C
≤ 135
o
C
T
C
= 25
o
C
t
p
= 8.3 ms
Conditions
MBR20020CT
(R)
20
14
20
200
MBR20030CT MBR20035CT
(R)
(R)
30
21
30
200
35
25
35
200
MBR20040CT
(R)
40
28
40
200
Units
V
V
V
A
I
FSM
1500
1500
1500
1500
A
Electrical Characteristics
(T
J
= 25
o
C unless otherwise specified)
Parameter
DC forward voltage
Symbol
V
F
Conditions
I
F
= 100 A
T
J
= 25
o
C
V
R
= 20 V
T
J
= 25
o
C
V
R
= 20 V
T
J
= 125
o
C
MBR20020CT
(R)
0.68
5
200
MBR20030CT
(R)
0.68
5
200
MBR20035CT
(R)
0.68
5
200
MBR20040CT
(R)
0.68
5
mA
200
Units
V
DC reverse current
I
R
Thermal Characteristics
(T
J
= 25
o
C unless otherwise specified)
Parameter
Thermal resistance
junction to case
Operating, storage
temperature range
Symbol
R
thJ-C
T
J
,
T
stg
MBR20020CT
(R)
0.5
- 40 to +175
MBR20030CT
(R)
0.5
- 40 to +175
MBR20035CT
(R)
0.5
- 40 to +175
MBR20040CT
(R)
0.5
- 40 to +175
Units
o
C/W
o
C
1
D-95, Sector 63, Noida – 201301, India • Tel: 0120-4205450 • Fax: 0120-4273653
sales@nainasemi.com • www.nainasemi.com