SD51
SCHOTTKY RECTIFIER
60 AMPERE
45 VOLTS
Switch mode Power Rectifier.
employing the Schottky Barrier principle in a large area metal-to-silicon power
diode.State-of-the-art geometry features epitaxial construction with oside
passivation and metal overlap contact. ideally suited for use as rectifiers in
low-voltage, high-frequency inverters, free whelling diodes, and polarity
protection diodes.
• Extremely Low V
F
• Low Power Loss/High
• Low Stored Charge, Majority
Efficiency
Carrier Conduction
• High Surge Capacity
Mechnical Characteristics :
• Case Welded steel, hermetically seated
• Finish : All External Surtaces Corrosion Resistant and Terminal
Lead is Readily Solderable
Solder Heat : The excellent heat transfer property of the heavy duty copper
anode terminal which transmits heat away from the die requires that caution be
used when attaching wires.
NAINA
•
Stud Torque: 15 Ib-in max
MAXIMUM RATINGS
Ratings
Symbol
Peak Repetitive Reverse Voltage
V
RRM
Working Peak Reverse Voltage
V
RWM
PC Blooking Voltage
V
R
Nonrepetitive Peak Reverse Voltage
V
RSM
Average Rectified Forward Current
I
O
V
R(equiv)
≤0.2
V
R(dc)..
T
C
=85
0
C
Ambient Temperature Rated V
R(dc).
P
F(AV)
= 0, R
θJA
=3.5
0
C/W
T
A
Nonrepetitive Peak Surge Current
I
FSM
(surge applied at rated load conditions, halfwave,
single phase, 60 Hz)
Operating and Storage Junction Temperature Range
T
J,
T
stg
(Reverse voltage applied)
Peak Operating Junction Temperature (Forward
T
J(pk)
Current Applied)
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction to case
R
θJC
ELECTRICAL CHARACTERISTICS
(T
C
=25
0
C unless otherwise noted)
Maximum Instantaneous Forward Voltage (I
F
=30 Amps)
V
F
( I
F
=60Amps)
(I
F
=120 Amps)
Maximum Instantaneous Reverse Current @ 25
0
C
@125
0
C
I
SD51
45
UNIT
Volts
54
60
90
800
for one cycle
-65 TO +150
150
Volts
Amps
C
Amps
0
0
C
C
0
Max
1.0
0.58
0.66
0.86
50
125
0
Unit
C/W
Volts
ma
ma
NAINA [ NAINA SEMICONDUCTOR LTD. ]
