RA
MICROWAVE RELAY
FOR ATTENUATOR
CIRCUIT
9.7
.382
5.9
.232
RA-RELAYS
line in the base circuit design which
spares the labor of machining the base.
3. Low profile small type
9.7(W)
×
14.7(L)
×
5.9(H) mm
.382(W)
×
.579(L)
×
.232(H) inch
4. High sensitivity: 140 mW nominal
operating power
5. High contact reliability
Electrical life: Min. 10
7
(10mA 10V DC)
14.70
.579
mm
inch
FEATURES
1. High frequency characteristics
(Impedance 50
Ω
, ~1.0GHz)
• Insertion loss; Max. 0.3dB
• Isolation; Min. 20dB (Between open
contacts)
Min. 30dB (Between contact
sets)
• V.S.W.R.; Max. 1.2
2. Surface mount terminal
This relay is a surface-mounted model
with excellent high-frequency proper-
ties. In addition, it can use a microstrip
SPECIFICATIONS
Contact
Arrangement
Contact material
Initial contact resistance
Contact rating (resistive)
Rating
Contact carrying power
Max. switching voltage
Max. switching current
Between
open con-
tacts
Isolation
Between
contact
sets
Insertion loss
V.S.W.R.
Input power
Single side stable
Nominal
operating
power
1 coil latching
2 coil latching
Mechanical (at 180 cpm)
10mA 10 V
DC(resis-
tive load)
Electrical
(at 20 cpm) 1A 30 V DC
(resistive
load)
2 Form C
Gold-clad silver alloy
Max. 75m
Ω
10mA 10 V DC
1A 30 V DC
Max. 3W(at 1.0GHz, imped-
ance 50
Ω
, V.S.W.R. max.1.2)
30 V DC
1A
Min. 20dB
Characteristics
Initial insulation resistance *
1
Between open con-
tacts
Between contact
sets
Initial breakdown
2
voltage *
Between contact
and coil
Between contact
and earth terminal
Operate time [Set time] *
3
(at 20
°
C)
Release time (without diode) [Reset time]
*
3
(at 20
°
C)
Temperature rise (at 20
°
C) *
4
Functional *
5
Shock resistance
Destructive *
6
Functional *
7
Vibration resistance
Destructive
Conditions for oper-
Ambient temp
ation, transport and
storage *
8
(Not freezing and
Humidity
condensing at low
temperature)
Unit weight
Remarks
10
7
* Specifications will vary with foreign standards certification ratings.
*
1
Measurement at same location as “Initial breakdown voltage” section.
*
2
Detection current: 10mA
*
3
Nominal operating voltage applied to the coil, excluding contact bounce time.
*
4
By resistive method, nominal voltage applied to the coil: 3W contact carrying
power: at 1.0GHz, Impedance 50
Ω
, V.S.W.R. Max.1.2
*
5
Half-wave pulse of sine wave: 11ms, detection time: 10
µ
s.
*
6
Half-wave pulse of sine wave: 6ms
*
7
Detection time: 10
µ
s
*
8
Refer to 5. Conditions for operation, transport and storage mentioned in
AMBIENT ENVIRONMENT (Page 61)
Min. 100 M
Ω
(at 500 V DC)
750 Vrms for 1 min.
1,000 Vrms for 1 min.
1,000 Vrms for 1 min.
1,000 Vrms for 1 min.
Max. 4ms (Approx. 2ms)
[Max. 4ms (Approx. 2ms)]
Max. 4ms (Approx. 1ms)
[Max. 4ms (Approx. 2ms)]
Max. 60
°
C
500 m/s
2
1,000 m/s
2
10 to 55 Hz at double
amplitude of 3mm
10 to 55 Hz at double
amplitude of 5mm
–40
°
C to +85
°
C
–40°F to +185°F
5 to 85% R.H.
Approx. 2g
.07oz
High fre-
quency
character-
istics
(~1GHz,
Imped-
ance 50
Ω
)
Min. 30dB
Max. 0.3dB
Max. 1.2
Max. 3W(at 1.0GHz, imped-
ance 50
Ω
, V.S.W.R. max.1.2)
140mW (1.5 to 12V)
200mW (24V)
300mW (48V)
70 mW (1.5 to 12V)
100mW (24V)
140mW (1.5 to 12V)
200mW (24V)
10
8
Expected
life (min.
operation)
10
5
TYPICAL APPLICATIONS
• Measurement instruments
Oscilloscope attenuator circuit
ORDERING INFORMATION
Ex.
A
RA
2
0
0
A
03
Coil voltage, V DC
1H: 1.5
03: 3
4H: 4.5
05: 5
06: 6
09: 9
12: 12
24: 24
48: 48
Product name Contact arrangement Operating function Type of operation Terminal shape
RA
2: 2 Form C
0: Single side stable 0: Standard
1: 1 coil latching
type
2: 2 coil latching
(B.B.M)
A: Surface-mount
terminal
Note: Standard packing; Carton: 40 pcs. Case 1,000 pcs.
80
NAIS [ NAIS(MATSUSHITA ELECTRIC WORKS) ]
