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N04Q1618C2BW-70I 参数 Datasheet PDF下载

N04Q1618C2BW-70I图片预览
型号: N04Q1618C2BW-70I
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM CMOS瓦特/双Vcc和VCCQ的终极功率降低256K 】 16位POWER SAVER技术 [4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 300 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N04Q16yyC2B
Advance Information
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual
Vcc and VccQ for Ultimate Power Reduction
256K×16 bit POWER SAVER TECHNOLOGY
Overview
The N04Q16yyC2B are ultra-low power memory
devices containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide ultra-low active and standby power. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently. The 4Mb SRAM is
optimized for the ultimate in low power and is
suited for various applications where ultra-low-
power is critical such as medical applications,
battery backup and power sensitive hand-held
devices. The unique page mode operation saves
active operating power and the dual power supply
rails allow very low voltage operation while
maintaining 3V I/O capability. The device can
operate over a very wide temperature range of 0
o
C
to +70
o
C for the lowest power and is also available
in the industrial range of -40
o
C to +85
o
C. The
devices are available in standard BGA and TSOP
packages. The devices are also available as
Known Good Die (KGD) for embedded package
applications.
Features
• Multiple Power Supply Ranges
1.1V - 1.3V
1.65V - 1.95V
2.3V - 2.7V
2.7V - 3.6V
• Dual Vcc / VccQ Power Supplies
1.2V Vcc with 3V VccQ
1.8V Vcc with 3V VccQ
2.5V Vcc with 3V VccQ
• Very low standby current
50nA typical for 1.2V operation
• Very low operating current
400µA typical for 1.2V operation at 1µs
• Very low Page Mode operating current
80µA typical for 1.2V operation at 1µs
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• BGA, TSOP and KGD options
• RoHS Compliant
Product Options
Part Number
N04Q1612C2Bx-15C
N04Q1618C2Bx-15C
N04Q1618C2Bx-70C
N04Q1625C2Bx-15C
N04Q1630C2Bx-70C
I/O
x16
x16
x16
x16
x16
Typical
Standby
Current
50nA
50nA
200nA
800nA
800nA
Vcc
(V)
1.2
1.8
2.5
3.0
VccQ
(V)
1.2, 1.8, 3
1.8, 2.5, 3
2.5, 3
3.0
Speed
(nS)
150ns
150ns
70ns
150ns
70ns
Typical
Operating
Operating Current Temperature
0.4 mA @ 1MHz
0.4 mA @ 1MHz
0.6 mA @ 1MHz
0.6 mA @ 1MHz
2.2mA @ 1MHz
0
o
C to +70
o
C
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
1