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N04Q1625C2BB-15C 参数 Datasheet PDF下载

N04Q1625C2BB-15C图片预览
型号: N04Q1625C2BB-15C
PDF下载: 下载PDF文件 查看货源
内容描述: 4Mb的超低功耗异步SRAM CMOS瓦特/双Vcc和VCCQ的终极功率降低256K 】 16位POWER SAVER技术 [4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY]
分类和应用: 静态存储器
文件页数/大小: 13 页 / 300 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N04Q16yyC2B
NanoAmp Solutions, Inc.
Absolute Maximum Ratings
1
Item
Voltage on any pin relative to V
SS
Voltage on V
CC
Supply Relative to V
SS
Power Dissipation
Storage Temperature
Operating Temperature
Soldering Temperature and Time
Symbol
V
IN,OUT
V
CC
P
D
T
STG
T
A
T
SOLDER
Rating
–0.3 to V
CC
+0.3
–0.3 to 4
500
–40 to 125
-40 to +85
260
o
C, 10sec
Unit
V
V
mW
o
o
o
Advance Information
C
C
C
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Item
Symbol
Device
N04Q1612...
Core Supply Voltage
V
CC
N04Q1618...
N04Q1625...
N04Q1630...
N04Q1612...
I/O Supply Voltage
V
CCQ
N04Q1618...
N04Q1625...
N04Q1630...
Input High Voltage
Input Low Voltage
Output High Voltage
Output Low Voltage
Input Leakage Current
Output Leakage Current
V
IH
V
IL
V
OH
V
OL
I
LI
I
LO
I
OH
= -100uA
I
OL
= 100uA
V
IN
= 0 to V
CC
OE = V
IH
or Chip
Disabled
Conditions
1.2V Core Device
1.8V Core Device
2.5V Core Device
3V Core Device
1.2V Core Device
1.8V Core Device
2.5V Core Device
3V Core Device
Min.
1.1
1.65
2.3
2.7
1.1
1.65
2.3
2.7
0.8 x
VCCQ
–0.3
V
CC
–0.2
0.2
0.5
0.5
Typ
1.2
1.8
2.5
3.0
Max
1.3
1.95
2.8
3.6
3.3
3.3
3.3
3.6
V
CC
+0.3
0.2 x
VCCQ
V
V
µA
µA
V
V
V
Unit
Stock No. 23451-B 2/06
The specification is ADVANCE INFORMATION and subject to change without notice.
4