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N08T1630C1BZ-70 参数 Datasheet PDF下载

N08T1630C1BZ-70图片预览
型号: N08T1630C1BZ-70
PDF下载: 下载PDF文件 查看货源
内容描述: 8MB超低功耗异步SRAM CMOS 512Kx16位 [8Mb Ultra-Low Power Asynchronous CMOS SRAM 512Kx16 bit]
分类和应用: 静态存储器
文件页数/大小: 9 页 / 254 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N08T1630CxB
8Mb Ultra-Low Power Asynchronous CMOS SRAM
512Kx16 bit
Overview
The N08T1630CxB is an integrated memory
device containing a low power 8 Mbit SRAM built
using a self-refresh DRAM array organized as
512,288 words by 16 bits. It is designed to be
identical in operation and interface to standard 6T
SRAMS. The device is designed for low standby
and operating current and includes a power-down
feature to automatically enter standby mode. The
device operates with two chip enable (CE1 and
CE2) controls and output enable (OE) to allow for
easy memory expansion. Byte controls (UB and
LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N08T1630CxB is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard BGA and TSOP2
packages compatible with other standard 512Kb x
16 SRAMs.
Features
• Single Wide Power Supply Range
2.7 to 3.6 Volts
• Very low standby current
70µA at 3.0V (Max)
• Very low operating current
2.0mA at 3.0V and 1µs (Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Very fast access time
55ns address access option
30ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Green package option for TSOP and BGA
Product Family
Part Number
N08T1630C2BZ
N08T1630C2BZ2
N08T1630C1BT
N08T1630C1BT2
Package Type
48 - BGA
Green 48 - BGA
44- TSOP2
Green 44- TSOP2
Operating
Temperature
Power
Supply (Vcc)
Speed
Standby
Operating
Current (I
SB
), Current (Icc),
Max
Max @ 3.0V
-40
o
C to +85
o
C
2.7V - 3.6V
55/70ns @
2.7V
70
µA
3 mA @ 1MHz
Pin Configuration (Top View)
1
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
VCC
VSS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
18
A
17
A
16
A
15
A
14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
UB
LB
I/O
15
I/O
14
I/O
13
I/O
12
VSS
VCC
I/O
11
I/O
10
I/O
9
I/O
8
A
8
A
9
A
10
A
11
A
12
A
13
Pin Descriptions
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
2
OE
UB
I/O
10
I/O
11
I/O
12
3
A
0
A
3
A
5
A
17
V
SS
A
14
A
12
A
9
5
A
2
CE1
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
CE2
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
NC
Pin Name
A
0
-A
18
WE
CE1
CE2
OE
LB
UB
I/O
0
-I/O
15
V
CC
V
SS
NC
Pin Function
Address Inputs
Write Enable Input
Chip Enable 1 Input
Chip Enable 2 Input (BGA only)
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Not Connected
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
V
SS
V
CC
44 Pin
TSOP2
I/O
14
I/O
13
I/O
15
A
18
NC
A
8
48 Ball BGA
6 x 8 mm
(DOC# 14-02-004 REV H ECN# 01-1102)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1