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N16L163WC2CZ1-55IL 参数 Datasheet PDF下载

N16L163WC2CZ1-55IL图片预览
型号: N16L163WC2CZ1-55IL
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mb的超低功耗异步SRAM CMOS 1024K 】 16位 [16Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K 】 16 bit]
分类和应用: 存储内存集成电路静态存储器
文件页数/大小: 11 页 / 266 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
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N16L163WC2C  
Advance Information  
NanoAmp Solutions, Inc.  
Functional Block Diagram  
Word  
Address  
Inputs  
Address  
Decode  
Logic  
A0 - A3  
Input/  
Page  
1024K  
Address  
Inputs  
Output  
Mux  
Address  
Decode  
Logic  
I/O0 - I/O7  
x 16 bit  
RAM Array  
A4 - A19  
and  
Buffers  
I/O8 - I/O15  
CE1  
CE2  
WE  
OE  
Control  
Logic  
UB  
LB  
Functional Description  
1
CE1  
CE2  
WE  
OE  
UB  
LB  
MODE  
POWER  
I/O0 - I/O15  
Standby2  
Standby2  
Standby2  
Write3  
H
X
X
L
X
L
X
X
X
L
X
X
X
X3  
L
X
X
X
X
High Z  
High Z  
Standby  
Standby  
Standby  
Active  
X
H
H
H
H
H
High Z  
L1  
L1  
L1  
L1  
L1  
L1  
Data In  
Data Out  
High Z  
L
H
H
Active  
Read  
Active  
L
H
Active  
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7  
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.  
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally  
isolated from any external influence and disabled from exerting any influence externally.  
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.  
1
Capacitance  
Item  
Symbol  
CIN  
Test Condition  
Min  
Max  
8
Unit  
pF  
VIN = 0V, f = 1 MHz, TA = 25oC  
VIN = 0V, f = 1 MHz, TA = 25oC  
Input Capacitance  
I/O Capacitance  
CI/O  
10  
pF  
1. These parameters are verified in device characterization and are not 100% tested  
Stock No. 23383-C  
3
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.