NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N16L163WC2C
Advance Information
16Mb Ultra-Low Power Asynchronous CMOS SRAM
1024K × 16 bit
Overview
The N16L163WC2C is an integrated memory
device containing a 8Mbit Static Random Access
Memory organized as 1,048,576 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with two chip enable
(CE1 and CE2) controls and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently and can also be used to
deselect the device. The N16L163WC2C is optimal
for various applications where low-power is critical
such as battery backup and hand-held devices.
The device can operate over a very wide
temperature range of -40
o
C to +85
o
C and is
available in JEDEC standard packages compatible
with other standard 1024Kb x 16 SRAMs
Features
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.5µA at 3.0V (Typical)
• Very low operating current
2.0mA at 3.0V and 1µs(Typical)
• Simple memory control
Dual Chip Enables (CE1 and CE2)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Ultra Low Power Sort Available
Product Family
Part Number
Package Type
Operating
Temperature
Power
Speed
Supply (Vcc)
Standby
Current Operating Current
(I
SB
),
(Icc), Typical
Typical
2.5
µA
2 mA @ 1MHz
N16L163WC2CT1
N16L163WC2CZ1
48 TSOP I Pb-Free
VFBGA Pb-Free
-40
o
C to +85
o
C
2.2V - 3.6V
55ns
Stock No. 23383-C
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NANOAMP [ NANOAMP SOLUTIONS, INC. ]
