NanoAmp Solutions, Inc.
670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N32T1630C1C
32Mb Ultra-Low Power Asynchronous CMOS Pseudo SRAM
w/ Page Mode Operation (2M x 16 bit)
Overview
The N32T1630C1C is an integrated memory
device containing a 32 Mbit SRAM built using a
self-refresh DRAM array organized as 2,097,152
words by 16 bits. The device is designed and
fabricated using NanoAmp’s advanced CMOS
technology to provide both high-speed
performance and ultra-low power. It is designed to
be identical in operation and interface to standard
6T SRAMS. Byte controls (UB and LB) allow the
upper and lower bytes to be accessed
independently and can also be used to deselect
the device. The N32T1630C1C offers a very high
speed page mode operation for improved
performance and operating power savings. The
device is optimal for various applications where
low-power is critical such as battery backup and
hand-held devices. Also included are several
power savings modes: a deep sleep mode and
partial array refresh mode where data is retained in
a portion of the array. The device can operate over
a very wide temperature range of -25
o
C to +85
o
C
and is available in a JEDEC standard VFRBGA
package compatible with other standard 2Mb x 16
SRAMs.
Features
• Dual voltage for Optimum Performance:
VccQ - 2.7 to 3.6 Volts
Vcc - 2.7 to 3.6 Volts (Vcc
≤
VccQ)
• Fast random access time
70ns at 2.7V
• Very fast page mode access time
25ns page cycle and access
• Very low standby current
80µA V (Typical)
• Very low operating current
1.0mA at 1µs (Typical)
• Simple memory control
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Automatic power down to standby mode
• PAR and RMS power saving modes
• Deep sleep option
• TTL compatible three-state output driver
Product Family
Part Number
Package
Type
Operating
Temperature
Power
Supply
2.7V - 3.6V (V
CC
)
Speed
70ns
Standby
Current (I
SB
),
Max
Operating
Current (Icc),
Max
N32T1630C1CZ 48-VFRBGA -25
o
C to +85
o
C
135
µA
@ 3.3V 3 mA @ 1MHz
Pin Configuration (Top View)
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
Pin Descriptions
Pin Name
A
0
-A
20
WE
CE
OE
UB,LB
ZZ
I/O
0
-I/O
15
V
CC
V
CCQ
V
SS
V
SSQ
DNU
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Output Enable Input
Byte Enable Inputs
Deep Sleep Input
Data Inputs/Outputs
Core Power
I/O Power
Ground
I/O Ground
Do Not Use
2
OE
UB
I/O
10
3
A
0
A
3
A
5
A
17
DNU/
VSS
A
14
A
12
A
9
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
ZZ
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
A
20
V
SSQ
I/O
11
V
CCQ
I/O
12
I/O
14
I/O
13
I/O
15
A
18
A
19
A
8
48 Ball VFRBGA
6 x 8 mm
(DOC# 14-02-005 Rev C ECN 01-0918)
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
NANOAMP [ NANOAMP SOLUTIONS, INC. ]
