欢迎访问ic37.com |
会员登录 免费注册
发布采购

N64T1630C1BZ-70I 参数 Datasheet PDF下载

N64T1630C1BZ-70I图片预览
型号: N64T1630C1BZ-70I
PDF下载: 下载PDF文件 查看货源
内容描述: 64MB超低功耗异步CMOS PSRAM 4M 】 16位 [64Mb Ultra-Low Power Asynchronous CMOS PSRAM 4M 】 16 Bits]
分类和应用: 静态存储器
文件页数/大小: 18 页 / 349 K
品牌: NANOAMP [ NANOAMP SOLUTIONS, INC. ]
 浏览型号N64T1630C1BZ-70I的Datasheet PDF文件第2页浏览型号N64T1630C1BZ-70I的Datasheet PDF文件第3页浏览型号N64T1630C1BZ-70I的Datasheet PDF文件第4页浏览型号N64T1630C1BZ-70I的Datasheet PDF文件第5页浏览型号N64T1630C1BZ-70I的Datasheet PDF文件第6页浏览型号N64T1630C1BZ-70I的Datasheet PDF文件第7页浏览型号N64T1630C1BZ-70I的Datasheet PDF文件第8页浏览型号N64T1630C1BZ-70I的Datasheet PDF文件第9页  
NanoAmp Solutions, Inc.
670 N. McCarthy Blvd. Suite 220, Milpitas, CA 95035
ph: 408-935-7777, FAX: 408-935-7770
www.nanoamp.com
N64T1630C1B
Advance Information
64Mb Ultra-Low Power Asynchronous CMOS PSRAM
4M × 16 Bits
Overview
The N64T1630C1B is an integrated memory
device containing a 64 Mbit Pseudo Static Random
Access Memory using a self-refresh DRAM array
organized as 4,194,304 words by 16 bits. It is
designed to be compatible in operation and
interface to standard 6T SRAMS. The device is
designed for low standby and operating current
and includes a power-down feature to
automatically enter standby mode. The device
includes a ZZ input for deep sleep as well as
several other power saving modes: Partial Array
Self Refresh mode where data is retained in a
portion of the array and Temperature
Compensated Refresh. Both these modes reduce
standby current drain. The N64T1630C1B can be
operated in a standard asynchronous mode and
data can also be read in a 4-word page mode for
fast access times. The die has separate power
rails, VccQ and VssQ for the I/O to be run from a
separate power supply from the device core.
Features
• Dual voltage rails for optimum power & per-
formance
Vcc - 2.7V - 3.3V
Vccq - 2.7V to 3.3V
• Fast Cycle Times
T
ACC
< 70 nS (60ns future)
T
PACC
< 25 nS
• Very low standby current
I
SB
< 170µA
• Very low operating current
Icc < 25mA
• PASR (Partial Array Self Refresh)
• TCR (Temperature Compensated Refresh)
Table 1: Product Family
Part Number
N64T1630C1BZ
Package
Type
BGA
Operating
Temperature
-25
o
C to +85
o
C
Power
Supply
2.7 - 3.3V
I/O Supply
2.7 - 3.3V
Speed
70ns
Standby
Current (I
SB
),
Max
170µA
Ball Congiguration
1
A
B
C
D
E
F
G
H
LB
I/O
8
I/O
9
Ball Description
3
A
0
A
3
A
5
A
17
A
21
A
14
A
12
A
9
2
OE
UB
I/O
10
4
A
1
A
4
A
6
A
7
A
16
A
15
A
13
A
10
5
A
2
CE
I/O
1
I/O
3
I/O
4
I/O
5
WE
A
11
6
ZZ
I/O
0
I/O
2
V
CC
V
SS
I/O
6
I/O
7
A
20
Pin Name
A
0
-A
21
WE
CE
ZZ
OE
LB
UB
I/O
0
-I/O
15
V
CC
V
SS
V
CCQ
V
SSQ
Pin Function
Address Inputs
Write Enable Input
Chip Enable Input
Deep Sleep Input
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
Power
Ground
Power I/O only
Ground I/O only
V
SSQ
I/O
11
V
CCQ
I/O
12
I/O
14
I/O
13
I/O
15
A
18
A
19
A
8
48 Pin BGA (top view)
6 x 8 mm
Stock No. 23357- Rev E 07/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1