Pb Free Product
http://www.ncepower.com
2N7002
NCE N-Channel
Enhancement Mode Power MOSFET
GENERAL FEATURES
●
V
DS
= 60V,I
D
= 0.115A
R
DS(ON)
< 3Ω @ V
GS
=4.5V
R
DS(ON)
< 2Ω @ V
GS
=10V
Schematic diagram
●
Lead free product is acquired
●
Surface Mount Package
Application
●Direct
Logic-Level Interface: TTL/CMOS
●Drivers:
Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●Battery
Operated Systems
●Solid-State
Relays
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
7002
Device
2N7002
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
I
D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
60
±20
0.115
0.8
0.2
-55 To 150
Unit
V
V
A
A
W
℃
625
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=60V,V
GS
=0V
Min
60
Typ
Max
Unit
V
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
