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2N7002K 参数 Datasheet PDF下载

2N7002K图片预览
型号: 2N7002K
PDF下载: 下载PDF文件 查看货源
内容描述: NCE N沟道增强型功率MOSFET [NCE N-Channel Enhancement Mode Power MOSFET]
分类和应用: 晶体晶体管开关光电二极管PC
文件页数/大小: 7 页 / 296 K
品牌: NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
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Pb Free Product
http://www.ncepower.com
2N7002K
NCE N-Channel
Enhancement Mode Power MOSFET
GENERAL FEATURES
V
DS
= 60V,I
D
= 0.3A
R
DS(ON)
< 3Ω @ V
GS
=4.5V
R
DS(ON)
< 2Ω @ V
GS
=10V
ESD Rating:HBM 2500V
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Schematic diagram
Application
●Direct
Logic-Level Interface: TTL/CMOS
●Drivers:
Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●Battery
Operated Systems
●Solid-State
Relays
SOT-23 top view
Marking and pin Assignment
Package Marking And Ordering Information
Device Marking
7002K
Device
2N7002K
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
I
D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
60
±20
0.3
0.8
0.35
-55 To 150
Unit
V
V
A
A
W
350
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=250μA
Min
60
Typ
Max
Unit
V
Wuxi NCE Power Semiconductor Co., Ltd
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