Pb Free Product
http://www.ncepower.com
BSS138K
NCE N-Channel
Enhancement Mode Power MOSFET
GENERAL FEATURES
●
V
DS
= 50V,I
D
= 0.22A
R
DS(ON)
< 3Ω @ V
GS
=4.5V
R
DS(ON)
< 2Ω @ V
GS
=10V
ESD Rating：HBM 2500V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Application
●Direct
Logic-Level Interface: TTL/CMOS
●Drivers:
Relays, Solenoids, Lamps, Hammers,Display,
Memories, Transistors, etc.
●Battery
Operated Systems
●Solid-State
Relays
Marking and pin Assignment
SOT-23 top view
Package Marking And Ordering Information
Device Marking
138K
Device
BSS138K
Device Package
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
50
±20
0.22
0.88
0.35
-55 To 150
Unit
V
V
A
A
W
℃
350
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=50V,V
GS
=0V
Min
50
Typ
Max
Unit
V
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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