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NCE0128
NCE N-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0128 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
●
V
DS
= 100V,I
D
=28A
R
DS(ON)
< 26mΩ @ V
GS
=10V（Typ：13.3 mΩ）
●
Special process technology for high ESD capability
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
TO-220 top view
Package Marking And Ordering Information
Device Marking
NCE0128
Device
NCE0128
Device Package
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
E
AS
Limit
100
±20
28
20
190
63
0.42
550
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
D
I
D
(100℃)
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
