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NCE01H14
NCE N-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The NCE01H14 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
●
V
DS
=100V,I
D
=140A
R
DS(ON)
< 6.5mΩ @ V
GS
=10V (Typ:4.5mΩ)
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
●
Special process technology for high ESD capability
Schematic diagram
Application
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100%
ΔVds
TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
NCE01H14
Device
NCE01H14
Device Package
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
E
AS
Limit
100
±20
140
97
550
330
2.2
1200
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
I
D
I
D
(100℃)
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
