NCE04N65
Pb-Free Product
NCE N-Channel
Enhancement Mode Power MOSFET
General Description
The
series of devices
use advanced super junction
technology and design to provide excellent R
DS(ON)
with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
V
DS
R
DS(ON)
I
D
650
950
4.5
V
mΩ
A
Features
●New
technology for high voltage device
●Low
on-resistance and low conduction losses
●small
package
●Ultra
Low Gate Charge cause lower driving requirements
●100%
Avalanche Tested
Application
●
●
●
Power factor correction（PFC）
Switched mode power supplies(SMPS)
Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
NCE04N65
Device Package
TO-251S
Marking
NCE04N65
TO-251S
Absolute Maximum Ratings (T
C
=25℃)
Parameter
Symbol
Drain-Source Voltage (
V
GS=
0V）
V
DS
Gate-Source Voltage (
V
DS=
0V)
V
GS
Continuous Drain Current at Tc=25°C
I
D (DC)
Continuous Drain Current at Tc=100°C
I
D (DC)
(Note 1)
I
DM (pluse)
Pulsed drain current
Table 1.
Drain Source voltage slope, VDS = 480 V, ID = 4.5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25
℃)
Derate above 25
°C
(Note2)
NCE04N65
650
±30
4.5
2.8
13.5
50
50
0.4
130
4.5
Unit
V
V
A
A
A
dv/dt
V/ns
W
W/
°C
P
D
E
AS
I
AR
Single pulse avalanche energy
Avalanche current
(Note 1)
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
