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NCE3010S
NCE N-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The NCE3010S uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
●
V
DS
=30V,I
D
=10A
R
DS(ON)
< 13.5mΩ @ V
GS
=10V
R
DS(ON)
< 20mΩ @ V
GS
=4.5V
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
Schematic diagram
Application
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
SOP-8 top view
Package Marking And Ordering Information
Device Marking
3010S
Device
NCE3010S
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Limit
30
±20
10
6
50
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
I
D
I
D
(100℃)
I
DM
P
D
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
R
θJC
50
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Wuxi NCE Power Semiconductor Co., Ltd
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