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NCE5549 参数 Datasheet PDF下载

NCE5549图片预览
型号: NCE5549
PDF下载: 下载PDF文件 查看货源
内容描述: NCE N沟道增强型功率MOSFET [NCE N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 368 K
品牌: NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
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Pb Free Product
http://www.ncepower.com
NCE5549
NCE N-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The NCE5549 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
V
DS
=55V,I
D
=49A
R
DS(ON)
< 15mΩ @ V
GS
=10V (Typ:8.4mΩ)
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100%
ΔVds
TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
NCE5549
Device
NCE5549
Device Package
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
E
AS
Limit
55
±20
49
35
160
100
0.67
450
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
I
D
I
D
(100℃)
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
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