NCE7560K
http://www.ncepower.com
Pb-Free Product
NCE N-Channel
Enhancement Mode Power MOSFET
General Description
The NCE7560K uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. It can be used in a wide variety of applications.
I
D
Product Summary
BV
DSS
R
DS(ON)
typ.
typ.
max.
84
6.8
8.0
60
V
mΩ
mΩ
A
Features
●
V
DS
=75V;I
D
=60A@ V
GS
=10V;
R
DS(ON)
<8mΩ @ V
GS
=10V
●
Special process technology for high ESD capability
●
Special designed for Convertors and power controls
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
●
Good stability and uniformity with high E
AS
●
Excellent package for good heat dissipation
100% UIS TESTED!
Application
●
●
●
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
NCE7560K
Device
NCE7560K
Device Package
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1.
Absolute Maximum Ratings (TA=25℃)
Parameter
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
P
D
E
AS
T
J
,T
STG
Value
75
±25
60
48
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Drain-Source Voltage (V
GS
=0V)
Gate-Source Voltage (V
DS
=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy
(Note 2)
Operating Junction and Storage Temperature Range
Notes
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH
Wuxi NCE Power Semiconductor Co., Ltd
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