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NCE7560K 参数 Datasheet PDF下载

NCE7560K图片预览
型号: NCE7560K
PDF下载: 下载PDF文件 查看货源
内容描述: NCE N沟道增强型功率MOSFET [NCE N-Channel Enhancement Mode Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 421 K
品牌: NCEPOWER [ WUXI NCE POWER SEMICONDUCTOR CO., LTD ]
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NCE7560K
http://www.ncepower.com
Pb-Free Product
NCE N-Channel
Enhancement Mode Power MOSFET
General Description
The NCE7560K uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate
charge. It can be used in a wide variety of applications.
I
D
Product Summary
BV
DSS
R
DS(ON)
typ.
typ.
max.
84
6.8
8.0
60
V
mΩ
mΩ
A
Features
V
DS
=75V;I
D
=60A@ V
GS
=10V;
R
DS(ON)
<8mΩ @ V
GS
=10V
Special process technology for high ESD capability
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
100% UIS TESTED!
Application
Power switching application
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
NCE7560K
Device
NCE7560K
Device Package
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1.
Absolute Maximum Ratings (TA=25℃)
Parameter
Symbol
V
DS
V
GS
I
D (DC)
I
D (DC)
I
DM (pluse)
dv/dt
P
D
E
AS
T
J
,T
STG
Value
75
±25
60
48
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
Drain-Source Voltage (V
GS
=0V)
Gate-Source Voltage (V
DS
=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed
(Note 1)
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy
(Note 2)
Operating Junction and Storage Temperature Range
Notes
1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition:Tj=25℃,VDD=50V,VG=10V,L=0.5mH
Wuxi NCE Power Semiconductor Co., Ltd
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