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NCE75H21
NCE N-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The NCE75H21 uses advanced trench technology and design
to provide excellent R
DS(ON)
with low gate charge. It can be
used
in Automotive applications and a wide variety of other
applications.
GENERAL FEATURES
●
V
DSS
=75V,I
D
=210A
R
DS(ON)
< 4mΩ @ V
GS
=10V
●
Good stability and uniformity with high E
AS
●
Special process technology for high ESD capability
●
High density cell design for ultra low Rdson
●
Fully characterized Avalanche voltage and current
●
Excellent package for good heat dissipation
Schematic diagram
Application
●
●
●
Automotive applications
Hard Switched and High Frequency Circuits
Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100%
ΔVds
TESTED!
TO-220
top view
Package Marking And Ordering Information
Device Marking
NCE75H21
Device
NCE75H21
Device Package
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Drain Current-Continuous
Drain Current-Continuous(T
C
=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 3)
Peak Diode Recovery dv/dt
(Note 4)
Operating Junction and Storage Temperature Range
E
AS
dv/dt
Limit
75
±20
210
150
850
480
3.2
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
I
D
I
D
(100℃)
I
DM
P
D
T
J
,T
STG
Wuxi NCE Power Semiconductor Co., Ltd
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