Pb Free Product
http://www.ncepower.com
NCE8205A
D1
D2
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE8205A uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
S1
S2
G1
G2
Schematic diagram
General Features
●
V
DS
= 20V,I
D
= 6A
R
DS(ON)
< 37.5mΩ @ V
GS
=2.5V
R
DS(ON)
< 27.5mΩ @ V
GS
=4.5V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Marking and pin Assignment
Application
●Battery
protection
●Load
switch
●Power
management
TSSOP-8 top view
Package Marking And Ordering Information
Device Marking
8205A
Device
NCE8205A
Device Package
TSSOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
20
±10
6
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
83
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=20V,V
GS
=0V
Min
20
Typ
Max
Unit
V
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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