Pb Free Product
http://www.ncepower.com
NCE9435
D
NCE P-Channel
Enhancement Mode Power MOSFET
DESCRIPTION
The NCE9435 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
S
G
GENERAL FEATURES
●
V
DS
= -30V,I
D
= -5.1A
R
DS(ON)
< 85mΩ @ V
GS
=-4.5V
R
DS(ON)
< 53mΩ @ V
GS
=-10V
●
High Power and current handing capability
●
Lead free product is acquired
●
Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●PWM
applications
●Load
switch
●Power
management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
9435
Device
NCE9435
Device Package
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
V
GS
Drain Current-Continuous
I
D
Drain Current-Pulsed (Note 1)
I
DM
Maximum Power Dissipation
P
D
Operating Junction and Storage Temperature Range
T
J
,T
STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
R
θJA
Limit
-30
±20
-5.1
-20
2.5
-55 To 150
Unit
V
V
A
A
W
℃
50
℃
/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V I
D
=-250μA
Min
-30
Typ
Max
Unit
V
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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