DATA
DATA
PRELIMINARY
SHEET
SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES
•
High f
T
f
T
= 5.5 GHz TYP.
| S
21e
| = 10.0 dB TYP. @f = 1.0 GHz, V
CE
=
−10
V, I
C
=
−15
mA
2
PACKAGE DIMENSIONS
(in milimeters)
_
2.8+0.2
0.4
+0.1
–0.05
•
•
•
•
1.5
0.65
+0.1
–0.15
High speed switching characteristics
Equivalent NPN transistor is the 2SC2351.
0.95
_
2.9+0.2
Alternative of the 2SA1424.
2
0.95
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CB0
V
CE0
V
EB0
I
C
P
T
T
i
T
stg
Rating
−20
−12
−3.0
−50
200
150
−65
to +150
Unit
V
V
1.1 to 1.4
0.3
Marking
0.16
+0.1
–0.06
V
mA
mW
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector Capacitance
Insertion Power Gain
Noise Figure
Symbol
I
CB0
I
EB0
h
FE
f
T
C
re
*
| S
21e
|
NF
2
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking: T93
Test Conditions
V
CB
=
−10
V
V
EB
=
−2
V
V
CE
=
−10
V, I
C
=
−15
mA
V
CE
=
−10
V, I
C
=
−15
mA
V
CB
=
−10
V, I
E
= 0, f = 1 MHz
V
CE
=
−10
V, I
C
=
−15
mA, f = 1.0 GHz
V
CE
=
−10
V, I
C
=
−3.0
mA, f = 1 GHz
MIN.
TYP.
0 to 0.1
MAX.
−0.1
−0.1
0.4
+0.1
–0.05
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
1
3
Unit
µA
µA
20
4.0
40
5.5
0.5
100
GHz
1
pF
dB
3
dB
8.0
10.0
2.0
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
h
FE
Classification
Rank
Marking
h
FE
FB
T93
20 to 100
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996
NEC [ NEC ]
