DATA SHEET
PNP SILICON POWER TRANSISTOR
2SB772
PNP SILICON POWER TRANSISTOR
DESCRIPTION
The 2SB772 is PNP silicon transistor suited for the output stage of 3
W audio amplifier, voltage regulator, DC-DC converter and relay
driver.
PACKAGE DRAWING (Unit: mm)
8.5 MAX.
3.2 ±0.2
3.8 ±0.2
2.8 MAX.
FEATURES
•
Low saturation voltage
V
CE(sat)
≤ −0.5
V (I
C
=
−2
A, I
B
=
−0.2
A)
•
Excellent h
FE
linearity and high h
FE
h
FE
= 60 to 400 (V
CE
=
−2
V, I
C
=
−1
A)
•
Less cramping space required due to small and thin package and
reducing the trouble for attachment to a radiator.
No insulator bushing required.
12.0 MAX.
2.5 ±0.2
13.0 MIN.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperature
Storage Temperature
−55
to +150°C
Junction Temperature
150°C Maximum
Maximum Power Dissipation
1.0 W
Total Power Dissipation (T
A
= 25°C)
10 W
Total Power Dissipation (T
C
= 25°C)
Maximum Voltages and Currents (T
A
= 25°C)
Collector to Base Voltage
−40
V
V
CBO
Collector to Emitter Voltage
−30
V
V
CEO
Emitter to Base Voltage
−5.0
V
V
EBO
Collector Current (DC)
−3.0
A
I
C(DC)
Note
I
C(pulse)
Collector Current (pulse)
−7.0
A
Note
Pulse Test PW
≤
350
µ
s, Duty Cycle
≤
2%
12 TYP.
0.55
+0.08
–0.05
0.8
+0.08
–0.05
1.2 TYP.
2.3 TYP.
2.3 TYP.
1: Emitter
2: Collector: connected to mounting plane
3: Base
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTIC
DC Current Gain
DC Current Gain
Gain Bandwidth Product
Output Capacitance
Collector Cutoff Current
Emitter Cutoff Current
Collector Saturation Voltage
Base Saturation Voltage
SYMBOL
h
FE1
h
FE2
f
T
C
ob
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
TEST CONDITIONS
V
CE
=
−2.0
V, I
C
=
−20
mA
V
CE
=
−5.0
V, I
C
=
−0.1
A
V
CB
=
−10
V, I
E
= 0, f = 1.0 MHz
V
CB
=
−30
V, I
E
= 0 A
V
EB
=
−3.0
V, I
C
= 0 A
I
C
=
−2.0
A, I
B
=
−0.2
A
I
C
=
−2.0
A, I
B
=
−0.2
A
Note
Note
Note
Note
MIN.
30
60
TYP.
220
160
80
55
MAX.
400
UNIT
V
CE
=
−2.0
V, I
C
=
−1.0
mA
MHz
pF
−1.0
−1.0
µ
A
µ
A
V
V
−0.3
−1.0
−0.5
−2.0
Note
Pulse Test: PW
≤
350
µ
s, Duty Cycle
≤
2%
CLASSIFICATION OF h
FE
Rank
Range
R
60 to 120
Q
100 to 200
P
160 to 320
E
200 to 400
Remark
Test Conditions: V
CE
=
−2.0
V, I
C
= 1.0 A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17118EJ2V0DS00 (2nd edition)
(Previous No. TC-3569)
Date Published March 2004 N CP(K)
Printed in Japan
The mark
shows major revised points.
c
2004
NEC [ NEC ]
