DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• High DC Current Gain: h
FE
= 200 TYP.
(V
CE
= 6.0 V, I
C
= 1.0 mA)
• High Voltage: V
CEO
= 50 V
ABSOLUTE MAXIMUM RATINGS
PACKAGE DIMENSIONS
in millimeters
2.8 ± 0.2
0.4
+0.1
–0.05
1.5
0.65
+0.1
–0.15
0.95
Maximum Voltages and Current (TA = 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current (DC)
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature P
T
Maximum Temperatures
Junction Temperature
Storage Temperature Range
T
j
T
stg
150
˚C
–55 to +150 ˚C
200
mW
1.1 to 1.4
V
CBO
V
CEO
V
EBO
I
C
60
50
5.0
100
V
V
V
mA
2.9 ± 0.2
2
3
0.95
Marking
0.3
0.16
+0.1
–0.06
TEST CONDITIONS
V
CB
= 60 V, I
E
= 0
V
EB
= 5.0 V, I
C
= 0
V
CE
= 6.0 V, I
C
= 1.0 mA*
V
V
V
MHz
pF
I
C
= 100 mA, I
B
= 10 mA*
I
C
= 100 mA, I
B
= 10 mA*
V
CE
= 6.0 V, I
C
= 1.0 mA*
V
CE
= 6.0 V, I
E
= –10 mA
V
CB
= 6.0 V, I
E
= 0, f = 1.0 MHz
0 to 0.1
ELECTRICAL CHARACTERISTICS (T
A
= 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Base to Saturation Voltage
Base Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
V
BE
f
T
C
ob
0.55
90
200
0.15
0.86
0.62
250
3.0
MIN.
TYP.
MAX.
0.1
0.1
600
0.3
1.0
0.65
1: Emitter
2: Base
3: Collector
UNIT
µ
A
µ
A
*
Pulsed: PW
≤
350
µ
s, Duty Cycle
≤
2 %
h
FE
Classification
Marking
h
FE
L4
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan
©
0.4
+0.1
–0.05
1
1984
NEC [ NEC ]
