DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
PACKAGE DIMENSIONS
(Unit: mm)
FEATURES
• Low Noise and High Gain.
NF: 2.3 dB, 2.4 dB
0.8 MIN.
4.5±0.1
1.6±0.2
1.5±0.1
S
21
e
: 20 dB, 12.5 dB
• Large P
T
in Small Package.
P
T
: 2 W with 16 cm
2
0.7 mm Ceramic Substrate.
E
0.42
±0.06
C
B
0.42±0.06
1.5
0.47
±0.06
3.0
0.41
+0.05
−0.03
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Termal Resistance
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
*
R
th(j-a)
*
35
18
3.0
150
2.0
62.5
V
V
V
mA
W
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
C/W
T
j
150
C
T
stg
65 to +150
C
* With 16 cm
2
0.7 mm
Ceramic Substrate
Document No. P10405EJ3V0DS00 (3rd edition)
(Previous No. TC-1458A)
Date Published March 1997 N
Printed in Japan
©
4.0±0.25
2.5±0.1
f = 200 MHz, 500 MHz
1994
NEC [ NEC ]
