DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURES
• Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP.
G
A
= 3.5 dB TYP.
cordless phones, etc.
• Gold electrode gives high reliability.
• Mini mold package, ideal for hybrid ICs.
@V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
@V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
PACKAGE DIMENSIONS (in mm)
0.4
+0.1
–0.05
2.8 ± 0.2
1.5
0.65
–0.15
+0.1
• Ideal for battery drive of pagers, compact radio equipment,
0.95
0.95
2.9 ± 0.2
B
E
C
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
q
C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
15
8
2
5
50
150
ð65
to +150
UNIT
V
V
V
mA
mW
qC
qC
PIN CONNECTIONS
E: Emitter
B: Base
C: Collector
Marking: R62
0.3
Marking
1.1 to 1.4
ELECTRICAL CHARACTERISTICS (T
A
= 25
q
C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Maximum Available Gain
Noise Figure
Associated Power Gain
Collector Capacitance
SYMBOL
I
CBO
I
EBO
h
FE
f
T
°S
21e
°
2
MAG
NF
G
A
C
ob
Note
TEST CONDITIONS
V
CB
= 5 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 1 V, I
C
= 250
P
A, pulse
V
CE
= 1 V, I
C
= 1 mA
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
V
CE
= 1 V, I
C
= 1 mA, f = 1 GHz
V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
V
CE
= 1 V, I
C
= 250
P
A, f = 1.0 GHz
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
MIN.
TYP.
MAX.
0.1
0.1
0 to 0.1
0.16
+0.1
–0.06
50
100
4
250
GHz
dB
dB
4.5
dB
dB
0.6
pF
4.0
6.5
12.5
3.0
3.5
0.4
Note
Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
Document No. P10406EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
©
0.4
+0.1
–0.05
UNIT
P
A
P
A
1997
NEC [ NEC ]
