欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SC4094 参数 Datasheet PDF下载

2SC4094图片预览
型号: 2SC4094
PDF下载: 下载PDF文件 查看货源
内容描述: 微波低噪声放大器NPN硅外延晶体管4引脚MINI模具 [MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD]
分类和应用: 晶体放大器小信号双极晶体管射频小信号双极晶体管微波光电二极管
文件页数/大小: 8 页 / 103 K
品牌: NEC [ NEC ]
 浏览型号2SC4094的Datasheet PDF文件第2页浏览型号2SC4094的Datasheet PDF文件第3页浏览型号2SC4094的Datasheet PDF文件第4页浏览型号2SC4094的Datasheet PDF文件第5页浏览型号2SC4094的Datasheet PDF文件第6页浏览型号2SC4094的Datasheet PDF文件第7页浏览型号2SC4094的Datasheet PDF文件第8页  
DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC4094
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
DESCRIPTION
The 2SC4094 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity.
proprietary new fabrication technique.
This achieved by direct nitride
2.9±0.2
(1.8)
0.85 0.95
PACKAGE DIMENSIONS
(Units: mm)
0.4
−0.05
0.4
−0.05
0.16
+0.1
−0.06
2.8
−0.3
+0.2
1.5
−0.1
2
3
4
0 to 0.1
+0.2
+0.1
passivated base surface process (DNP process) which is an NEC
+0.1
FEATURES
• NF = 1.2 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 7 mA

S
21e

2
= 15 dB TYP. @f = 1.0 GHz, V
CE
= 8 V, I
C
= 20 mA
1
0.6
−0.05
+0.1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
10
1.5
65
200
150
V
V
V
mA
mW
1.1
−0.1
0.8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25

C)
+0.2

65 to +150

C

C
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
ELECTRICAL CHARACTERISTICS (T
A
= 25

C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Maximum Available Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
f
T
C
re
50
9
0.25
13
15
17
1.2
2.0
0.8
MIN.
TYP.
MAX.
1.0
1.0
250
GHz
pF
dB
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1 V, I
C
= 0
V
CE
= 8V, I
C
= 20 mA
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 8 V, I
C
= 7 mA, f = 1.0 GHz

A

A

S
21e

2
MAG
NF
h
FE
Classification
Class
Marking
h
FE
R36/RCF *
R36
50 to 100
R37/RCG *
R37
80 to 160
R38/RCH *
R38
125 to 250
* Old Specification / New Specification
Document No. P10366EJ1V1DS00 (1st edition)
Date Published March 1997 N
Printed in Japan
©
0.4
+0.1
−0.05
(1.9)
1987