DATA SHEET
SILICON TRANSISTOR
2SC4703
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier
operating with low supply voltage (V
CE
= 5 V).
This low distortion
4.5±0.1
1.6±0.2
1.5±0.1
PACKAGE DIMENSIONS
(Unit: mm)
characteristic makes it suitable for CATV, tele-communication and other
use. It employs surface mount type plastic package, Power Mini Mold
(SOT-89).
FEATURES
• Low distortion at low supply voltage.
IM
2
55 dB TYP., IM
3
76 dB TYP.
@V
CE
= 5 V, I
C
= 50 mA, V
O
= 105 dB
/75
• Large P
T
with surface mount type package.
0.8 MIN.
0.42
±0.06
E
1.5
C
B
0.42±0.06
0.47
±0.06
3.0
0.41
+0.05
−0.03
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
25
12
2.5
150
1.8
150
V
V
V
mA
W
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
55 to +150
C
C
* 0.7 mm
16 cm double sided ceramic substrate. (Copper plating)
Document No. P10375EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
4.0±0.25
2.5±0.1
1994
NEC [ NEC ]
