DATA SHEET
SILICON TRANSISTOR
2SC5006
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High f
T
• Low C
re
• Low NF
: 4.5 GHz TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
: 0.7 pF TYP. (@ V
CE
= 3 V, I
E
= 0, f = 1 MHz)
: 1.2 dB TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
2
1.6 ± 0.1
0.8 ± 0.1
PACKAGE DIMENSIONS
in millimeters
• High |S
21e
|
2
: 9 dB TYP. (@ V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz)
1.6 ± 0.1
1.0
0.5
0.2
+0.1
–0
0.5
ORDERING INFORMATION
PART
NUMBER
2SC5006
2SC5006-T1
3
1
QUANTITY
50 pcs./Unit
3 kpcs./Reel
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
0.75 ± 0.05
0.6
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
1. Emitter
2. Base
3. Collector
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
20
12
3.0
100
125
150
–60 to +150
V
V
V
mA
mW
˚C
˚C
Document No. P10385EJ2V0DS00 (2nd edition)
(Previous No. TD-2399)
Date Published July 1995 P
Printed in Japan
0 to 0.1
©
0.15
+0.1
–0.05
0.3
+0.1
–0
• Ultra Super Mini Mold Package.
1993
NEC [ NEC ]
