DATA SHEET
SILICON TRANSISTOR
2SC5010
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and
excellent linearity. This is achieved by direct nitride passivated base surface process (NEST3 process) which is an
NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High f
T
• Low C
re
• Low NF
: 12.0 GHz TYP. (@ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz)
: 0.4 pF TYP. (@ V
CE
= 3 V, I
E
= 0, f = 1 MHz)
: 1.5 dB TYP. (@ V
CE
= 3 V, I
C
= 3 mA, f = 2 GHz)
2
1.6 ± 0.1
1.0
0.2
+0.1
–0
0.5
0.3
+0.1
–0
0.15
+0.1
–0.05
PACKAGE DIMENSIONS
in milimeters
1.6 ± 0.1
0.8 ± 0.1
• High |S
21e
|
2
: 8.5 dB TYP. (@ V
CE
= 3 V, I
C
= 10 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.
0.5
ORDERING INFORMATION
PART
NUMBER
2SC5010
2SC5010-T1
3
1
QUANTITY
50 pcs/Unit.
3 kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3(Collector) face to perforation side
of the tape.
0.75 ± 0.05
0.6
*
Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
9
6
2
30
125
150
–65 to +150
V
V
V
mA
mW
˚C
˚C
1. Emitter
2. Base
3. Collector
Document No. P10389EJ2V0DS00 (2nd edition)
(Previous No. TD-2401)
Date Published July 1995 P
Printed in Japan
0 to 0.1
©
1993
NEC [ NEC ]
