DATA SHEET
SILICON TRANSISTOR
2SC5015
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
• Small Package
• High Gain Bandwidth Product (f
T
= 12 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.2
0.3
+0.1
–0.05
1.25 ± 0.1
0.3
+0.1
–0.05
(LEADS 2, 3, 4)
1
4
0.4
+0.1
–0.05
perforation side of the tape.
2SC5015-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) faceto
perforation side of the tape.
0.9 ± 0.1
0.3
2SC5015-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) faceto
0 to 0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
*
Please contact with responsible NEC person, if you require evaluation
sample.Unit sample quantity shall be 50 pcs. (Part No.: 2SC5014)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
i
T
stg
9
6
2
30
150
150
–65 to + 150
V
V
V
mA
mW
˚C
˚C
Caution: Electrostatic Sensitive Device
Document No. P10394EJ2V0DS00 (2nd edition)
(Previous No. TD-7938)
Date Published August 1995 P
Printed in Japan
©
0.3
+0.1
–0.05
0.15
+0.1
–0.05
PART
NUMBER
QUANTITY
PACKING STYLE
(1.3)
ORDERING INFORMATION
2.0 ± 0.2
(1.25)
0.60 0.65
T83
2
3
1993
NEC [ NEC ]
