DATA SHEET
SILICON TRANSISTOR
2SC5195
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low Voltage Operation, Low Phase Distortion
• Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.5 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
PACKAGE DRAWINGS
(Unit: mm)
1.6±0.1
0.8±0.1
2
0.5 0.5
1.6±0.1
1.0
0.2
–0
+0.1
I
C
= 100 mA
• Supercompact Mini Mold Package
3
ORDERING INFORMATION
PART NUMBER
2SC5195
QUANTITY
In-bulk products
(50 pcs.)
Taped products
(3 Kpcs/Reel)
PACKING STYLE
Embossed tape 8 mm wide.
Pin 3 (Collector) face to perforation side of
the tape.
1
0.75±0.05
0.6
2SC5195-T1
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
RATING
9
6
2
100
125
150
–65 to +150
UNIT
V
V
V
mA
mW
˚C
˚C
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P10398EJ2V0DS00 (2nd edition)
(Previous No. TD-2488)
Date Published August 1995 P
Printed in Japan
©
0 to 0.1
0.15
–0.05
+0.1
0.3
–0
+0.1
88
1994
NEC [ NEC ]
