DATA SHEET
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SD2403 is a transistor featuring high current
capacitance in small dimension.
This transistor is ideal for
DC/DC converters and motor drivers.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1572
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
Conditions
Ratings
80
60
6.0
3.0
5.0
Unit
V
V
V
A
A
Base current (DC)
Base current (pulse)
I
B(DC)
I
B(pulse)
PW
≤
10 ms
duty cycle
≤
50 %
16 cm
2
×
0.7 mm ceramic board mounted
0.2
0.4
A
A
Total power dissipation
Junction temperature
Storage temperature
P
T
T
j
T
stg
2.0
150
−55
to +150
W
°C
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998
NEC [ NEC ]
