DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ356
P-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SJ356 is a P-channel MOS FET of a vertical type and is
a switching element that can be directly driven by the output of an
IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
PACKAGE DIMENSIONS (in mm)
4.5 ±0.1
1.6 ±0.2
1.5 ±0.1
FEATURES
• Can be directly driven by 5-V IC
• Low ON resistance
R
DS(on)
= 0.95
Ω
MAX. @V
GS
= –4 V, I
D
= –1.0 A
R
DS(on)
= 0.50
Ω
MAX. @V
GS
= –10 V, I
D
= –1.0 A
0.8 MIN.
S
0.42
±0.06
1.5
D
G
0.47
±0.06
3.0
0.42
±0.06
4.0 ±0.25
0.41
+0.03
–0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
PIN CONNECTIONS
diode
S: Source
D: Drain
G: Gate
Marking: PR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms
Duty cycle
≤
1 %
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
16 cm
2
×
0.7 mm, ceramic substrate used
2.0
150
–55 to +150
W
˚C
˚C
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
–60
–20/+10
±2.0
±4.0
UNIT
V
V
A
A
The internal diode connected between the gate and source of this product is to protect the product from static
electricity. If the product is used in a circuit where the rated voltage of the product may be exceeded, connect
a protection circuit.
Take adequate preventive measures against static electricity when handling this product.
The information in this document is subject to change without notice.
Document No. D11218EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
2.5 ±0.1
1996
NEC [ NEC ]
