DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ448
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ448 is P-Channel MOS Field Effect Transistor de-
signed for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
FEATURES
•
Low On-Resistance
R
DS(on)
= 2.0
Ω
MAX. (@ V
GS
= –10 V, I
D
= –2.0 A)
•
•
•
•
15.0 ±0.3
3 ±0.1
4 ±0.2
Built-in G-S Gate Protection Diodes
High Avalanche Capability Ratings
Isolated TO-220 Package
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)*
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
–250
m
25
m
4.0
m
16
V
V
A
A
W
W
˚C
1 2 3
0.7 ±0.1
2.54
13.5
MIN.
12.0 ±0.2
Low C
iss
C
iss
= 470 pF TYP.
1.3 ±0.2
1.5 ±0.2
2.54
0.65 ±0.1
2.5 ±0.1
Total Power Dissipation (T
c
= 25 ˚C) P
T1
Total Power Dissipation (T
A
= 25 ˚C) P
T2
Channel Temperature
Storage Temperature
Single Avalanche Current**
Single Avalanche Energy**
*
PW
≤
10
µ
s, Duty Cycle
≤
1 %
T
ch
T
stg
I
AS
E
AS
30
2.0
150
–4.0
80
1. Gate
2. Drain
3. Source
–55 to +150 ˚C
A
mJ
MP-45F(ISOLATED TO-220)
Drain
**
Starting T
ch
= 25 ˚C, R
G
= 25
Ω,
V
GS
= –20 V
→
0
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. D10029EJ1V0DS00
Date Published May 1995 P
Printed in Japan
©
1995
NEC [ NEC ]
