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2SJ462 参数 Datasheet PDF下载

2SJ462图片预览
型号: 2SJ462
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道MOS场效应晶体管高速开关 [P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING]
分类和应用: 晶体开关晶体管场效应晶体管
文件页数/大小: 6 页 / 65 K
品牌: NEC [ NEC ]
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ462
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SJ462 is a switching device which can be driven directly
by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be
driven by a low voltage power source, so it is suitable for applica-
tions such as power management.
Package Drawings (unit : mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
3.65 ±0.1
FEATURES
1.0
1
0.5 ±0.1
2
3
• Can be driven by a 2.5 V power source.
• New-type compact package.
Has advantages of packages for small signals and for power
transistors, and compensates those disadvantages.
• Low on-state resistance.
R
DS(ON)
: 0.29
MAX. @V
GS
= –2.5 V, I
D
= –0.5 A
R
DS(ON)
: 0.19
MAX. @V
GS
= –4.0 V, I
D
= –1.0 A
0.5 ±0.1
2.1
0.4 ±0.05
0.85 ±0.1
4.2
Equivalent Circuit
Electrode
Connection
1. Source
2. Drain
3. Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= +25 ˚C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
–12
±8.0
±2.5
±5.0*
2.0**
150
–55 to +150
V
V
A
A
W
˚
C
˚
C
Gate Protect
Diode
Gate
Drain
Internal Diode
Source
Marking : UA3
*
PW
10 ms, Duty Cycle
1 %
**
Mounted on ceramic board of 7.5 cm
2
×
0.7 mm
Document No. D11449EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
5.4 ±0.25
0.55
©
1996