PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ601
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed
for solenoid, motor and lamp driver.
ORDERING INFORMATION
PART NUMBER
2SJ601
2SJ601-Z
PACKAGE
TO-251
TO-252
FEATURES
•
Low on-state resistance:
R
DS(on)1
= 31 mΩ MAX. (V
GS
= –10 V, I
D
= –18 A)
R
DS(on)2
= 46 mΩ MAX. (V
GS
= –4.0 V, I
D
= –18 A)
•
Low C
iss
: C
iss
= 3300 pF TYP.
•
Built-in gate protection diode
•
TO-251/TO-252 package
(TO-251)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
GS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
–60
V
V
A
A
W
W
°C
°C
A
mJ
(TO-252)
m
20
m
36
m
120
65
1.0
150
–55 to +150
–35
123
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note2
Note2
I
AS
E
AS
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, R
G
= 25
Ω,
V
GS
= –20 V
¡
0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
D14646EJ1V0DS00 (1st edition)
Date Published November 2000 NS CP(K)
Printed in Japan
©
2000
NEC [ NEC ]
