DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1580
SWITCHING
N-CHANNEL MOS FET
DESCRIPTION
The 2SK1580 is an N -channel vertical type MOS FET which
can be driven by 2.5 V power supply.
As the 2SK1580 is driven by low voltage and does not require
consideration of driving current, it is suitable for appliance
including VCR cameras and headphone stereos which need
2.0±0.2
PACKAGE DRAWING (Unit: mm)
2.1±0.1
1.25±0.1
0.3
+0.1
−0
power saving.
0.65
0.65
2
3
• Directly driven by ICs having a 3 V power supply.
• Not necessary to consider driving current because of its high
input impedance.
resistor.
0.9±0.1
0.3
Marking
ORDERING INFORMATION
PART NUMBER
2SK1580
PACKAGE
SC-70 (SSP)
0 to 0.1
0.15
+0.1
−0.05
• Possible to reduce the number of parts by omitting the bias
0.3
+0.1
−0
FEATURES
1
1. Source
2. Gate
3. Drain
Marking: G13
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note
EQUIVALENT CIRCUIT
16
±16
±100
±200
150
150
−55
to +150
V
V
mA
mA
mW
°C
°C
Gate
Protection
Diode
Source
Gate
Body
Diode
Drain
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Note
PW
≤
10 ms, Duty Cycle
≤
50%
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D13555EJ5V0DS00 (5th edition)
Date Published June 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
1991
NEC [ NEC ]
