DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK1958
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK1958 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
2.1 ±0.1
1.25 ±0.1
2.0 ±0.2
+0.1
0.3
–0
0.65 0.65
FEATURES
• Gate can be driven by 1.5 V
• Because of its high input impedance, there’s no need to
consider drive current
components required can be reduced
• Since bias resistance can be omitted, the number of
G
S
+0.1
+0.1
0.3
Marking
0.15
–0.05
0.9 ±0.1
0 to 0.1
Marking: G21
EQUIVALENT CURCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
stg
PW
≤
10 ms, duty cycle
≤
50 %
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
16
±7.0
±0.1
±0.2
150
150
–55 to +150
UNIT
V
V
A
A
mW
˚C
˚C
Document No. D11221EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
0.3
–0
D
©
1996
NEC [ NEC ]
