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2SK2053 参数 Datasheet PDF下载

2SK2053图片预览
型号: 2SK2053
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOS FET,用于高速开关 [N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING]
分类和应用: 开关
文件页数/大小: 6 页 / 64 K
品牌: NEC [ NEC ]
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2053
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SK2053 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 1.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DIMENSIONS (in mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
3.65 ±0.1
FEATURES
• New package intermediate between small signal and
power types
• Gate can be driven by 1.5 V
• Low ON resistance
R
DS(on)
= 0.40
MAX. @ V
GS
= 1.5 V, I
D
= 1.0 A
R
DS(on)
= 0.12
MAX. @ V
GS
= 4.0 V, I
D
= 2.5 A
EQUIVALENT CURCUIT
Drain (D)
1.0
S
0.5 ±0.1
D
0.85
±0.1
G
0.5 ±0.1
5.4 ±0.25
0.55
0.4 ±0.05
Marking: NA1
2.1
4.2
PIN
CONNECTIONS
Gate (G)
Gate
protection
diode
Source (S)
Internal S: Source
D: Drain
diode
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Total Power Dissipation
Channel Temperature
Operating Temperature
Storage Temperature
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
T
ch
T
opt
T
stg
PW
10 ms, duty cycle
50 %
7.5 cm
2
×
0.7 mm ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
16
±7.0
±5.0
±10.0
2.0
150
–20 to +60
–55 to +150
UNIT
V
V
A
A
W
˚C
˚C
˚C
Document No. D11224EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
©
1996