DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2055
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2055 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
characteristics and is ideal for driving the actuators and DC/DC
converters.
PACKAGE DIMENSIONS (in mm)
5.7 ±0.1
2.0 ±0.2
1.5 ±0.1
3.65 ±0.1
FEATURES
• New package intermediate between small-signal and power
models
• Can be directly driven by output of 5-V IC
• Low ON resistance
R
DS(on)
= 0.45
Ω
MAX. @V
GS
= 4 V, I
D
= 1.0 A
R
DS(on)
= 0.35
Ω
MAX. @V
GS
= 10 V, I
D
= 1.0 A
1.0
0.5 ±0.1
S
D
0.85
±0.1
G
5.4 ±0.25
0.55
0.5 ±0.1
0.4 ±0.05
2.1
4.2
Marking: NA3
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate
protection
diode
Source (S)
Internal
diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms,
Duty cycle
≤
50 %
7.5 cm
2
×
0.7 mm, ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
100
±20
±2.0
±4.0
UNIT
V
V
A
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
2.0
150
–55 to +150
W
˚C
˚C
Document No. D11226EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
NEC [ NEC ]
