DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2109
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2109 is a N-channel MOS FET of a vertical type and
is a switching element that can be directly driven by the output of
an IC operating at 5 V.
This product has a low ON resistance and superb switching
and DC/DC converters.
characteristics and is ideal for driving the actuator, such as motors
PACKAGE DIMENSIONS (in mm)
4.5 ± 0.1
1.6 ± 0.2
2.5 ± 0.1
4.0 ± 0.25
1.5 ± 0.1
0.8 MIN.
S
0.42
±0.06
D
G
FEATURES
• Low ON resistance
R
DS(on)
= 1.0
Ω
MAX. @V
GS
= 4.0 V, I
D
= 0.3 A
• High switching speed
t
on
+ t
off
< 100 ns
• Low parasitic capacitance
0.42
0.47 ±0.06
1.5 ±0.06
3.0
0.41
+0.03
–0.05
EQUIVALENT CIRCUIT
Drain (D)
Gate (G)
Gate protection
diode
Source (S)
Internal diode
PIN CONNECTIONS
S: Source
D: Drain
G: Gate
Marking: NS
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms,
Duty cycle
≤
50 %
16 cm
2
×
0.7 mm, ceramic substrate used
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATING
60
±20
±0.5
±1.0
UNIT
V
V
A
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
2.0
150
–55 to +150
W
˚C
˚C
Document No. D11229EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
1996
NEC [ NEC ]
