DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2158
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2158 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2158 is suitable for use in low-voltage
portable systems such as headphone stereo sets and camcorders.
PACKAGE DIMENSIONS
(in millimeters)
0.4
–0.05
2.8
±
0.2
1.5
+0.1
+0.1
0.65
–0.15
2.9
±
0.2
FEATURES
• Capable of drive gate with 1.5 V
• Because of high input impedance, there is no need to
consider driving current.
• Bias resistance can be omitted, enabling reduction in total
number of parts.
0.95 0.95
2
+0.1
+0.1
1
0.3
Marking
1.1 to 1.4
0 to 0.1
0.16
–0.06
Marking: G23
PIN CONNECTION
1. Source (S)
2. Gate (G)
3. Drain (D)
EQUIVALENT CIRCUIT
3
Internal
diode
2
Gate protection
diode
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms,
Duty Cycle
≤
50 %
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
200
150
–55 to +150
mW
˚C
˚C
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATINGS
50
±7.0
±0.1
±0.2
UNIT
V
V
A
A
Document No. D11234EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
0.4
–0.05
3
©
1996
NEC [ NEC ]
