DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2159
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING
The 2SK2159 is an N-channel vertical type MOS FET featur-
ing an operating voltage as low as 1.5 V. Because it can be
driven on a low voltage and it is not necessary to consider
driving current, the 2SK2159 is suitable for driving actuators of
low-voltage portable systems such as headphone stereo sets
and camcorders.
0.8 MIN.
PACKAGE DIMENSIONS
(in millimeters)
4.5
±
0.1
1.6
±
0.2
4.0
±
0.25
2.5
±
0.1
1.5
±
0.1
1
0.42
±
0.06
2
3
FEATURES
• Capable of drive gate with 1.5 V
• Small R
DS(on)
R
DS(on)
= 0.7
Ω
MAX. @V
GS
= 1.5 V, I
D
= 0.1 A
R
DS(on)
= 0.3
Ω
MAX. @V
GS
= 4.0 V, I
D
= 1.0 A
0.47
1.5
±
0.06
3.0
0.42
±
0.06
0.41
+0.03
–0.05
EQUIVALENT CIRCUIT
2
3
Gate protection
diode
1
Internal diode
PIN CONNECTION
1. Source (S)
2. Drain (D)
Marking: NW
3. Gate (G)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
SYMBOL
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
PW
≤
10 ms,
Duty Cycle
≤
50 %
Mounted on 16 cm
2
×
0.7 mm ceramic substrate.
V
GS
= 0
V
DS
= 0
TEST CONDITIONS
RATINGS
60
±14
±2.0
±4.0
UNIT
V
V
A
A
Total Power Dissipation
Channel Temperature
Storage Temperature
P
T
T
ch
T
stg
2.0
150
–55 to +150
W
˚C
˚C
Document No. D11235EJ2V0DS00 (2nd edition)
Date Published June 1996 P
Printed in Japan
©
1996
NEC [ NEC ]
